Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for ultra-high concentrator solar cells
Identifieur interne : 000110 ( Main/Repository ); précédent : 000109; suivant : 000111Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for ultra-high concentrator solar cells
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Abstract
Tunnel junctions are key for developing multijunction solar cells (MJSC) for ultra-high concentration applications. We have developed a highly conductive, high bandgap p++-AlGaAs/n++-GaInP tunnel junction with a peak tunneling current density for as-grown and thermal annealed devices of 996 A/cm2 and 235 A/cm2, respectively. The J-V characteristics of the tunnel junction after thermal annealing, together with its behavior at MJSCs typical operation temperatures, indicate that this tunnel junction is a suitable candidate for ultra-high concentrator MJSC designs. The benefits of the optical transparency are also assessed for a lattice-matched GaInP/GaInAs/Ge triple junction solar cell, yielding a current density increase in the middle cell of 0.506 mA/cm2 with respect to previous designs.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Highly conductive p<sup>++</sup>
-AlGaAs/n<sup>++</sup>
-GaInP tunnel junctions for ultra-high concentrator solar cells</title>
<author><name sortKey="Barrigon, Enrique" uniqKey="Barrigon E">Enrique Barrigon</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30</s1>
<s2>28040 Madrid</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Espagne</country>
<placeName><region nuts="2" type="communauté">Communauté de Madrid</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Garcia, Ivan" uniqKey="Garcia I">Ivan Garcia</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30</s1>
<s2>28040 Madrid</s2>
<s3>ESP</s3>
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<country>Espagne</country>
<placeName><region nuts="2" type="communauté">Communauté de Madrid</region>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory</s1>
<s2>Golden, Colorado 80401</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>National Renewable Energy Laboratory</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Barrutia, Laura" uniqKey="Barrutia L">Laura Barrutia</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30</s1>
<s2>28040 Madrid</s2>
<s3>ESP</s3>
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<country>Espagne</country>
<placeName><region nuts="2" type="communauté">Communauté de Madrid</region>
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<author><name sortKey="Rey Stolle, Ignacio" uniqKey="Rey Stolle I">Ignacio Rey-Stolle</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30</s1>
<s2>28040 Madrid</s2>
<s3>ESP</s3>
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<country>Espagne</country>
<placeName><region nuts="2" type="communauté">Communauté de Madrid</region>
</placeName>
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</author>
<author><name sortKey="Algora, Carlos" uniqKey="Algora C">Carlos Algora</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30</s1>
<s2>28040 Madrid</s2>
<s3>ESP</s3>
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<country>Espagne</country>
<placeName><region nuts="2" type="communauté">Communauté de Madrid</region>
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</author>
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<title level="j" type="abbreviated">Prog. photovolt. : (Print)</title>
<title level="j" type="main">Progress in photovoltaics : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Concentrator solar cells</term>
<term>Current density</term>
<term>Gallium phosphide</term>
<term>Germanium</term>
<term>Indium phosphide</term>
<term>Mismatch lattice</term>
<term>Multijunction solar cells</term>
<term>Ternary compound</term>
<term>Thermal annealing</term>
<term>Transparent material</term>
<term>Tunnel effect</term>
<term>Tunnel junction</term>
<term>Voltage current curve</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Jonction tunnel</term>
<term>Cellule solaire concentrateur</term>
<term>Cellule solaire multijonction</term>
<term>Effet tunnel</term>
<term>Densité courant</term>
<term>Recuit thermique</term>
<term>Caractéristique courant tension</term>
<term>Accommodation réseau</term>
<term>Composé ternaire</term>
<term>Phosphure de gallium</term>
<term>Phosphure d'indium</term>
<term>Matériau transparent</term>
<term>Germanium</term>
<term>GaInP</term>
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<front><div type="abstract" xml:lang="en">Tunnel junctions are key for developing multijunction solar cells (MJSC) for ultra-high concentration applications. We have developed a highly conductive, high bandgap p<sup>++</sup>
-AlGaAs/n<sup>++</sup>
-GaInP tunnel junction with a peak tunneling current density for as-grown and thermal annealed devices of 996 A/cm<sup>2</sup>
and 235 A/cm<sup>2</sup>
, respectively. The J-V characteristics of the tunnel junction after thermal annealing, together with its behavior at MJSCs typical operation temperatures, indicate that this tunnel junction is a suitable candidate for ultra-high concentrator MJSC designs. The benefits of the optical transparency are also assessed for a lattice-matched GaInP/GaInAs/Ge triple junction solar cell, yielding a current density increase in the middle cell of 0.506 mA/cm<sup>2</sup>
with respect to previous designs.</div>
</front>
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<fA03 i2="1"><s0>Prog. photovolt. : (Print)</s0>
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<fA05><s2>22</s2>
</fA05>
<fA06><s2>4</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Highly conductive p<sup>++</sup>
-AlGaAs/n<sup>++</sup>
-GaInP tunnel junctions for ultra-high concentrator solar cells</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>BARRIGON (Enrique)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>GARCIA (Ivan)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BARRUTIA (Laura)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>REY-STOLLE (Ignacio)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>ALGORA (Carlos)</s1>
</fA11>
<fA14 i1="01"><s1>Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30</s1>
<s2>28040 Madrid</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>National Renewable Energy Laboratory</s1>
<s2>Golden, Colorado 80401</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>399-404</s1>
</fA20>
<fA21><s1>2014</s1>
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<fC01 i1="01" l="ENG"><s0>Tunnel junctions are key for developing multijunction solar cells (MJSC) for ultra-high concentration applications. We have developed a highly conductive, high bandgap p<sup>++</sup>
-AlGaAs/n<sup>++</sup>
-GaInP tunnel junction with a peak tunneling current density for as-grown and thermal annealed devices of 996 A/cm<sup>2</sup>
and 235 A/cm<sup>2</sup>
, respectively. The J-V characteristics of the tunnel junction after thermal annealing, together with its behavior at MJSCs typical operation temperatures, indicate that this tunnel junction is a suitable candidate for ultra-high concentrator MJSC designs. The benefits of the optical transparency are also assessed for a lattice-matched GaInP/GaInAs/Ge triple junction solar cell, yielding a current density increase in the middle cell of 0.506 mA/cm<sup>2</sup>
with respect to previous designs.</s0>
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<s5>01</s5>
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<fC03 i1="02" i2="3" l="FRE"><s0>Cellule solaire concentrateur</s0>
<s5>02</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>22</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s5>24</s5>
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<s5>24</s5>
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<s5>24</s5>
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<s5>25</s5>
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<s5>25</s5>
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<s5>25</s5>
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<s2>NC</s2>
<s5>26</s5>
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<fC03 i1="13" i2="X" l="ENG"><s0>Germanium</s0>
<s2>NC</s2>
<s5>26</s5>
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<s2>NC</s2>
<s5>26</s5>
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<fC03 i1="14" i2="X" l="FRE"><s0>GaInP</s0>
<s4>INC</s4>
<s5>82</s5>
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<fN21><s1>097</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
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